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Vertical‐Tunneling Field‐Effect Transistor Based on WSe 2 ‐MoS 2 Heterostructure with Ion Gel Dielectric
Author(s) -
Jeon Hyun Bae,
Shin Gwang Hyuk,
Lee Khang June,
Choi SungYool
Publication year - 2020
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.202000091
Subject(s) - materials science , quantum tunnelling , heterojunction , optoelectronics , field effect transistor , gate dielectric , transistor , dielectric , tunnel field effect transistor , electrical engineering , voltage , engineering
A p‐type tunneling field‐effect transistor is demonstrated based on a van der Waals vertical heterostructure of WSe 2 and MoS 2 , utilizing the ion gel dielectric as top gate. Band‐to‐band tunneling is achieved by modulating the band alignment of the heterojunction of WSe 2 and MoS 2 with gating the WSe 2 channel through ion gel top gate. A fabricated tunneling field‐effect transistor shows a minimum subthreshold swing of 36 mV dec −1 and ON/OFF current ratio of 10 6 at room temperature. Furthermore, evidence of band‐to‐band tunneling is clearly confirmed through temperature dependent I–V characteristics. This work holds considerable promise for the low‐power computational devices based on integrated circuits.