Premium
Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device
Author(s) -
Huang WeiChen,
Zheng HaoXuan,
Chen PoHsun,
Chang TingChang,
Tan YungFang,
Lin ShihKai,
Zhang YongCi,
Jin FuYuan,
Wu ChungWei,
Yeh YuHsuan,
Chou ShengYao,
Huang HuiChun,
Chen YanWen,
Sze Simon M.
Publication year - 2020
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.202000066
Subject(s) - materials science , resistive random access memory , transistor , optoelectronics , voltage , resistor , resistive touchscreen , thin film transistor , electrical engineering , nanotechnology , layer (electronics) , engineering
In this study, a one transistor one resistor (1T1R) structure combining a fin‐like low‐temperature polycrystalline‐silicon (LTPS) transistor and a resistive random access memory (RRAM) is successfully fabricated. For the fin‐like LTPS transistor, both n‐type and p‐types show excellent electrical output characteristics. Fin‐like structure produces more stable output characteristics. Also, the forming and current–voltage ( I – V ) characteristics are measured in this study, and the RRAM exhibits a forming voltage of about −1.9 V. As for the I – V switching property, the devices are stable and show excellent performance, with the set and reset voltages showing only minimal change over 100 cycles. Moreover, combining the fin‐like LTPS transistor and RRAM into a 1T1R structure results in favorable operation over 100 cycles, with excellent retention and endurance. According to these results, RRAM can be successfully combined with a fin‐like LTPS transistor for application in current integrated circuit processes without difficulty.