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Graphene Field‐Effect Transistors on Hexagonal‐Boron Nitride for Enhanced Interfacial Thermal Dissipation
Author(s) -
Liu Donghua,
Chen Xiaosong,
Zhang Ying,
Wang Dingguan,
Zhao Yan,
Peng Huisheng,
Liu Yunqi,
Xu Xiangfan,
Wee Andrew Thye Shen,
Wei Dacheng
Publication year - 2020
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.202000059
Subject(s) - materials science , graphene , chemical vapor deposition , substrate (aquarium) , field effect transistor , optoelectronics , nanotechnology , transistor , boron nitride , van der waals force , voltage , electrical engineering , oceanography , chemistry , engineering , organic chemistry , molecule , geology
Owing to its atomic thickness, thermal dissipation is one significant bottleneck for the practical application of graphene in electronics. Here, it is demonstrated that a high‐quality ultraclean van der Waals interface can be obtained after modifying the SiO 2 /Si substrate with hexagonal‐boron nitride ( h ‐BN) by plasma‐enhanced chemical vapor deposition, which improves the mobility and the interfacial thermal dissipation of graphene field‐effect transistors (FETs). On h ‐BN, interfacial thermal resistance decreases by more than 77% and the saturated power density of graphene FETs increases by 2–3‐folds to 3.45 × 10 5 W cm −2 , higher than the power density of current CPUs (≈100 W cm −2 ), demonstrating its potential in future graphene‐based electronics.
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