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The Application of a High‐κ Polymer Dielectric in Graphene Transistors
Author(s) -
Wen Jiamin,
Yan Chengyuan,
Sun Zhenhua
Publication year - 2020
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.202000031
Subject(s) - materials science , graphene , dielectric , transistor , semiconductor , substrate (aquarium) , optoelectronics , polymer , scattering , thin film transistor , nanotechnology , layer (electronics) , composite material , optics , electrical engineering , engineering , voltage , geology , oceanography , physics
The high‐κ polymer P(VDF‐TrFE‐CFE) is applied in the dielectric layer of a thin film transistor based on graphene, inducing a considerable overall performance improvement compared with conventional SiO 2 or ordinary polymer PMMA dielectrics. A systematical study reveals the reason for this improvement to be the strong screening effect on the Coulomb scattering in the dielectric‐semiconductor interface, which originates from the high‐κ value of P(VDF‐TrFE‐CFE). This positive effect is dominant enough to compensate for the adverse effects induced by the application of P(VDF‐TrFE‐CFE), including the large surface roughness and strong phonon scattering. A prototype transistor fabricated on a plastic substrate shows similar superior performance and sustainability upon bending operation, testifying the adaptability of P(VDF‐TrFE‐CFE) in a flexible graphene transistor. This study proposes a high‐κ polymer dielectric that is valid for high‐performing transistors based on 2D semiconductor materials.