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Resistive Switching: Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices (Adv. Electron. Mater. 10/2019)
Author(s) -
Petzold Stefan,
Zintler Alexander,
Eilhardt Robert,
Piros Eszter,
Kaiser Nico,
Sharath Sankaramangalam Ulhas,
Vogel Tobias,
Major Márton,
McKenna Keith Patrick,
MolinaLuna Leopoldo,
Alff Lambert
Publication year - 2019
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201970054
Subject(s) - materials science , grain boundary , resistive random access memory , electrode , dielectric strength , tin , resistive touchscreen , optoelectronics , dielectric , nanotechnology , electrical engineering , composite material , metallurgy , microstructure , engineering , chemistry
In article number 1900484, Stefan Petzold, Alexander Zintler and co‐workers demonstrate that grain‐boundary‐engineered memristive devices show forming‐free and highly reproducible behavior. The finger on top of the crystallographic pole figure symbolizes the engineering aspect enforcing the growth of favorable grain boundaries in the functional HfOx layer by texture transfer from the TiN bottom electrode. The lightning indicates the tamed and controlled soft breakdown of the dielectric. The memory array and the neuron‐like features point to possible applications in electronic circuits.