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2D Electronics: Electronic Devices and Circuits Based on Wafer‐Scale Polycrystalline Monolayer MoS 2 by Chemical Vapor Deposition (Adv. Electron. Mater. 8/2019)
Author(s) -
Wang Lin,
Chen Li,
Wong Swee Liang,
Huang Xin,
Liao Wugang,
Zhu Chunxiang,
Lim YeeFun,
Li Dabing,
Liu Xinke,
Chi Dongzhi,
Ang KahWee
Publication year - 2019
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201970038
Subject(s) - materials science , monolayer , chemical vapor deposition , electronics , nanotechnology , wafer , fabrication , transistor , optoelectronics , electronic circuit , field effect transistor , thin film transistor , semiconductor , electrical engineering , voltage , layer (electronics) , engineering , medicine , alternative medicine , pathology
In article number 1900393, Xinke Liu, Dongzhi Chi, Kah‐Wee Ang, and co‐workers report the demonstration of diverse electronic building blocks including field‐effect transistors, logic gates, and memristors. These building blocks are based upon wafer‐scale monolayer MoS 2 synthesized via a scalable chemical vapor deposition technique. By virtue of a fully complementary metal‐oxide‐semiconductor‐compatible fabrication process, this work paves the way toward unleashing the potential of atomically thin MoS 2 for practical next‐generation ultrathin electronics.
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