Memory Devices: An Electric‐Field‐Controlled High‐Speed Coexisting Multibit Memory and Boolean Logic Operations in Manganite Nanowire via Local Gating (Adv. Electron. Mater. 6/2019) | Zendy

Shi Qian | Zendy; Jiang Fengxian | Zendy; Yu Yang | Zendy; Lin Hanxuan | Zendy; Kou Yunfang | Zendy; Miao Tian | Zendy; Liu Hao | Zendy; Yang Wenting | Zendy; Wang Wenbin | Zendy; Cai Peng | Zendy; Xu Xiaohong | Zendy; Guo Hangwen | Zendy; Yin Lifeng | Zendy; Shen Jian | Zendy

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Memory Devices: An Electric‐Field‐Controlled High‐Speed Coexisting Multibit Memory and Boolean Logic Operations in Manganite Nanowire via Local Gating (Adv. Electron. Mater. 6/2019)

Author(s) -

Shi Qian,

Jiang Fengxian,

Yu Yang,

Lin Hanxuan,

Kou Yunfang,

Miao Tian,

Liu Hao,

Yang Wenting,

Wang Wenbin,

Cai Peng,

Xu Xiaohong,

Guo Hangwen,

Yin Lifeng,

Shen Jian

Publication year - 2019

Publication title -

advanced electronic materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.25

H-Index - 56

ISSN - 2199-160X

DOI - 10.1002/aelm.201970029

Subject(s) - manganite , nanowire , materials science , electric field , realization (probability) , gating , logic gate , optoelectronics , nanotechnology , electrical engineering , condensed matter physics , physics , mathematics , quantum mechanics , engineering , neuroscience , statistics , ferromagnetism , biology

In article number 1900020 , a novel approach to the realization of coexisting multi‐bit memory and Boolean logic operations in a single device unit is demonstrated by Q. Shi et al. This is achieved through the use of manganite nanowires, which interact with electric fields in such a way as to allow control of eight‐level resistive states with high accuracy. Their architecture requires a current density of just 4 × 10 1 A cm −2 to operate and exhibits a switching time of less than 8 ns.

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