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Memory Devices: An Electric‐Field‐Controlled High‐Speed Coexisting Multibit Memory and Boolean Logic Operations in Manganite Nanowire via Local Gating (Adv. Electron. Mater. 6/2019)
Author(s) -
Shi Qian,
Jiang Fengxian,
Yu Yang,
Lin Hanxuan,
Kou Yunfang,
Miao Tian,
Liu Hao,
Yang Wenting,
Wang Wenbin,
Cai Peng,
Xu Xiaohong,
Guo Hangwen,
Yin Lifeng,
Shen Jian
Publication year - 2019
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201970029
Subject(s) - manganite , nanowire , materials science , electric field , realization (probability) , gating , logic gate , optoelectronics , nanotechnology , electrical engineering , condensed matter physics , physics , mathematics , quantum mechanics , engineering , neuroscience , statistics , ferromagnetism , biology
In article number 1900020 , a novel approach to the realization of coexisting multi‐bit memory and Boolean logic operations in a single device unit is demonstrated by Q. Shi et al. This is achieved through the use of manganite nanowires, which interact with electric fields in such a way as to allow control of eight‐level resistive states with high accuracy. Their architecture requires a current density of just 4 × 10 1 A cm −2 to operate and exhibits a switching time of less than 8 ns.