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Polymer Memory Devices: Control of Resistive Switching Voltage by Nanoparticle‐Decorated Wrinkle Interface (Adv. Electron. Mater. 5/2019)
Author(s) -
Mao Huiwu,
Zhou Zhe,
Wang Xiangjing,
Ban Chaoyi,
Ding Yamei,
Sun Tao,
Yin Yuhang,
Liu Zhengdong,
Liu Juqing,
Huang Wei
Publication year - 2019
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201970024
Subject(s) - materials science , graphene , nanoparticle , electrode , wrinkle , voltage , nanotechnology , optoelectronics , polymer , resistive touchscreen , shape memory polymer , resistive random access memory , oxide , low voltage , composite material , electrical engineering , engineering , chemistry , metallurgy
In article number 1800503 , Juqing Liu, Wei Huang, and coworkers propose an effective strategy combining wrinkle surface and nanoparticle decoration to control the resistive switching voltage in polymer memory devices. By manipulating the nanoparticle density on the wrinkled surface of a reduced graphene oxide electrode, the optimized device exhibits high performance nonvolatile memory with an ultra‐low switching voltage, high ON/OFF ratio, long retention time, and excellent reproducibility.