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Memristors: A Spin–Orbit‐Torque Memristive Device (Adv. Electron. Mater. 4/2019)
Author(s) -
Zhang Shuai,
Luo Shijiang,
Xu Nuo,
Zou Qiming,
Song Min,
Yun Jijun,
Luo Qiang,
Guo Zhe,
Li Ruofan,
Tian Weicheng,
Li Xin,
Zhou Hengan,
Chen Huiming,
Zhang Yue,
Yang Xiaofei,
Jiang Wanjun,
Shen Ka,
Hong Jeongmin,
Yuan Zhe,
Xi Li,
Xia Ke,
Salahuddin Sayeef,
Dieny Bernard,
You Long
Publication year - 2019
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201970022
Subject(s) - memristor , materials science , ferromagnetism , condensed matter physics , domain wall (magnetism) , magnetization , spin (aerodynamics) , torque , layer (electronics) , quantum tunnelling , electron , spin transfer torque , optoelectronics , nanotechnology , electrical engineering , magnetic field , physics , quantum mechanics , engineering , mechanical engineering
A domain wall can be driven back and forth in a continuous manner in a ferromagnetic (FM) layer by applying in‐plane positive or negative current pulses along the heavy‐metal (HM) layer, as reported by Long You and co‐workers in article number 1800782 . Utilizing the spin‐orbit torque that the current exerts on the CoFeB magnetization results in memristive (synapse‐like) functions.