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Resistive Switching: Organic Memristor Utilizing Copper Phthalocyanine Nanowires with Infrared Response and Cation Regulating Properties (Adv. Electron. Mater. 4/2019)
Author(s) -
Lv Ziyu,
Hu Qikun,
Xu ZongXiang,
Wang Junjie,
Chen Zhonghui,
Wang Yan,
Chen Meng,
Zhou Kui,
Zhou Ye,
Han SuTing
Publication year - 2019
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201970021
Subject(s) - materials science , memristor , nanowire , resistive random access memory , protein filament , copper phthalocyanine , optoelectronics , resistive touchscreen , phthalocyanine , copper , electrical conductor , nanotechnology , absorption (acoustics) , composite material , electronic engineering , electrode , electrical engineering , chemistry , engineering , metallurgy
In article number 1800793 , Zong‐Xiang Xu, Ye Zhou, Su‐Ting Han, and co‐workers report a NIR‐sensitive organic memristor based on solution‐processed copper phthalocyanine nanowires. The uniform mesh structure of the device enables a well‐manipulated Ag + migration path, promotes the formation/rupture of robust conductive filament, and ultimately improves memory performance. Furthermore, the strong NIR absorption of the nanowires ensures photo‐mediated resistive switching.