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Ferroelectrics: Revealing the Effects of Trace Oxygen Vacancies on Improper Ferroelectric Manganite with In Situ Biasing (Adv. Electron. Mater. 4/2019)
Author(s) -
Cheng Shaobo,
Meng Qingping,
Han MyungGeun,
Deng Shiqing,
Li Xing,
Zhang Qinghua,
Tan Guotai,
Botton Gianluigi A.,
Zhu Yimei
Publication year - 2019
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201970017
Subject(s) - manganite , multiferroics , ferroelectricity , materials science , biasing , condensed matter physics , in situ , nanotechnology , optoelectronics , ferromagnetism , voltage , dielectric , physics , quantum mechanics , meteorology
In article number 1800827 , Shaobo Cheng, Yimei Zhu and the co‐workers report a novel ferroelectric switching dynamic behavior in the single‐phase multiferroic material YMnO 3 . In situ observations and corresponding numerical calculations demonstrate that defect chemistry plays an important role in domain switching and can be utilized as an additional parameter for controlling the electricfield distribution within multiferroic materials.