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Magnetoresistance: Large Magnetoresistance and 15 Boolean Logic Functions Based on a ZnCoO Film and Diode Combined Device (Adv. Electron. Mater. 3/2019)
Author(s) -
Zhang Kun,
Zhang Yue,
Zhang Zhizhong,
Zheng Zhenyi,
Wang Guanda,
Zhang Youguang,
Liu Qiwei,
Yan Shishen,
Zhao Weisheng
Publication year - 2019
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201970016
Subject(s) - magnetoresistance , materials science , diode , logic gate , optoelectronics , magnetic field , electrical engineering , physics , engineering , quantum mechanics
In article number 1800812 , Yue Zhang, Weisheng Zhao, and co‐workers demonstrate a diode enhanced magnetoresistance (MR) device featuring a large MR value (–6850%) and a high magnetic‐field sensitivity (0.04 T) with a working current <0.5 mA at room temperature. Integrating with a control bit, a reconfigurable logic unit is established, which can perform 15 Boolean logic operations. This work can improve the performance of logic‐in‐memory architectures.