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Nonvolatile Memory: Ultrafast Multilevel Switching in Au/YIG/n‐Si RRAM (Adv. Electron. Mater. 2/2019)
Author(s) -
Chen Zhiwei,
Huang Weichuan,
Zhao Wenbo,
Hou Chuangming,
Ma Chao,
Liu Chuanchuan,
Sun Haoyang,
Yin Yuewei,
Li Xiaoguang
Publication year - 2019
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201970008
Subject(s) - resistive random access memory , materials science , nanosecond , optoelectronics , ultrashort pulse , non volatile memory , power consumption , switching time , nanotechnology , power (physics) , electrical engineering , optics , laser , voltage , physics , quantum mechanics , engineering
Sub‐nanosecond (≈540 ps) resistive switching with high off/on resistance ratio is demonstrated in an Au/YIG/n‐Si resistive random access memory (RRAM) at room temperature and 85 °C in article number 1800418 by Yuewei Yin, Xiaoguang Li, and co‐workers. Five discrete resistance levels with ultrafast switching clearly show reliable retentions. Such an RRAM is promising for next‐generation non‐volatile memories with ultrahigh speed, low power consumption, and high density.