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Dual‐Gated MoS 2 Transistors for Synaptic and Programmable Logic Functions
Author(s) -
Du Jianyu,
Ge Chen,
Riahi Hassen,
Guo Erjia,
He Meng,
Wang Can,
Yang Guozhen,
Jin Kuijuan
Publication year - 2020
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201901408
Subject(s) - neuromorphic engineering , gating , transistor , computer science , logic gate , materials science , voltage , electrical engineering , neuroscience , artificial neural network , artificial intelligence , engineering , algorithm , biology
Neuromorphic computers, which can store information and compute at the same time, have been considered to be a potential candidate for greatly improving computing efficiency. The development of high‐performance artificial synapses, which are the basic unit of brain‐like chips, is very important for realizing efficient neuromorphic computing. Here, a dual‐gated MoS 2 transistor is designed to realize synaptic functions and programmable logic operations. The channel conductance is modulated via top electrolyte gating to mimic important synaptic functions, such as excitatory postsynaptic current, paired‐pulse facilitation, and spike‐timing dependent plasticity. The synaptic transistor exhibits ultra‐low energy consumption with 12.7 fJ. Furthermore, the MoS 2 transistor can dynamically reconfigure the logic operations of “AND,” “OR,” and “NOT” by combining top electrolyte gating with back gating. Classical Pavlov's dog experiment can be simulated by the dual gated device. These results indicate that the proposed synaptic transistor has potential applications in realizing neuromorphic and programmable logic devices.