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Enhanced Thermoelectric Performance in N‐Type Mg 3.2 Sb 1.5 Bi 0.5 by La or Ce Doping into Mg
Author(s) -
Zhang Fan,
Chen Chen,
Li Shan,
Yin Li,
Yu Bo,
Sui Jiehe,
Cao Feng,
Liu Xingjun,
Ren Zhifeng,
Zhang Qian
Publication year - 2020
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201901391
Subject(s) - doping , lanthanide , materials science , analytical chemistry (journal) , thermoelectric effect , chalcogen , electrical resistivity and conductivity , thermoelectric materials , nuclear chemistry , crystallography , ion , chemistry , thermal conductivity , optoelectronics , physics , organic chemistry , chromatography , quantum mechanics , composite material , thermodynamics
N‐type Mg 3.2 Sb 1.5 Bi 0.5 materials are prepared by cation‐site doping with lanthanides (La, Ce). Both La‐ and Ce‐doped samples exhibit a higher doping limit and greater efficiency than those of chalcogen (Te, Se, S)‐doped n‐type Mg 3.2 Sb 1.5 Bi 0.5 samples. High electron carrier concentration ≈9 × 10 19 cm −3 is obtained in Mg 3.18 La 0.02 Sb 1.5 Bi 0.5 and Mg 3.185 Ce 0.015 Sb 1.5 Bi 0.5 , which is close to the theoretical doping‐concentration limit and induces contributions from more electron bands. A higher electrical conductivity was thus obtained and is beneficial to the enhanced ZT values for lanthanide‐doped Mg 3.2 Sb 1.5 Bi 0.5 . The highest ZT value ≈1.6 is achieved in Mg 3.19 La 0.01 Sb 1.5 Bi 0.5 at 693 K, along with a ZT ≈1.50 in Mg 3.19 Ce 0.01 Sb 1.5 Bi 0.5 at 693 K, indicating that lanthanides provide a promising doping strategy for Mg 3.2 Sb 1.5 Bi 0.5 ‐based materials.