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Anisotropic In‐Plane Ballistic Transport in Monolayer Black Arsenic‐Phosphorus FETs
Author(s) -
Zhou Wenhan,
Zhang Shengli,
Wang Yangyang,
Guo Shiying,
Qu Hengze,
Bai Pengxiang,
Li Zhi,
Zeng Haibo
Publication year - 2020
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201901281
Subject(s) - zigzag , materials science , monolayer , anisotropy , transistor , optoelectronics , semiconductor , field effect transistor , ballistic conduction , nanotechnology , phosphorene , condensed matter physics , electrical engineering , voltage , physics , optics , geometry , mathematics , engineering , quantum mechanics , electron
The performance limits of monolayer arsenic‐phosphorus (AsP) field‐effect transistors (FETs) are explored by first‐principles simulations of ballistic transport in nanoscale devices. The monolayer AsP holds a direct bandgap of 0.92 eV with significantly anisotropic electronic properties. Transfer characteristics of n‐type and p‐type AsP FETs are thoroughly investigated by scaling channel length in the armchair and zigzag direction, respectively. The simulation results indicate that AsP FETs exhibit exceptional device characteristics, such as high on‐state current, short delay time, and low power consumption. Moreover, transfer characteristics demonstrate superior anisotropy on in‐plane electrical transport properties. In particular, in the zigzag direction, even if the channel length is scaled down to 4 nm, the device performance still can satisfy the International Technology Roadmap for Semiconductors high‐performance requirement. Finally, through benchmarking energy‐delay product against other typical 2D FETs, AsP FETs are revealed to be strongly competitive 2D FETs.