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Ligand Tailoring Oxide Colloidal Quantum Dots for Silicon‐Integrated Ultraviolet Photodiode
Author(s) -
Lin Richeng,
Kan Hao,
Zheng Wei,
Huang Feng
Publication year - 2020
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201901238
Subject(s) - photodiode , materials science , optoelectronics , photodetector , ultraviolet , silicon , quantum dot , graphene , detector , quantum efficiency , infrared , optics , nanotechnology , physics
In the past, benefiting from the mature micro‐technologies of crystalline‐silicon (c‐Si), c‐Si electronic and optoelectronic devices have brought revolutionary convenience to daily lives, with sensitive visible and near‐infrared photodetectors, the basic device in cameras for visible spectroscopy and color imaging, as an example. However, the sensitivity of all‐Si photodetectors cannot meet the needs of deep‐ultraviolet (DUV) detection with important applications in spectral imaging analysis. Based on this circumstance, a 0D–3D silicon‐integrated photodiode is presented to obtain highly sensitive DUV detection. A vertically stacked graphene/GAO/Si back‐to‐back photodiode has high photoresponsivity (0.165 A/W and EQE ≈ 80.2% at 0 V bias, 7.42 A/W and EQE ≈ 3611% at −1 V bias) and fast response speed (3 ms) under DUV illumination by using composite modified wide‐band‐gap oxide colloidal quantum dots as the DUV sensitive layer. The performance of the detector is successfully verified by DUV imaging with a single‐point‐detection imaging system.