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Controllable Doping of Transition‐Metal Dichalcogenides by Organic Solvents
Author(s) -
Li XiaoKuan,
Sun RuoXuan,
Guo HaoWei,
Su BaoWang,
Li DeKang,
Yan XiaoQing,
Liu ZhiBo,
Tian JianGuo
Publication year - 2020
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201901230
Subject(s) - doping , materials science , dopant , molybdenum disulfide , transition metal , dimethylformamide , molecule , molybdenum , dipole , transistor , nanotechnology , metal , optoelectronics , organic chemistry , electrical engineering , metallurgy , chemistry , voltage , solvent , engineering , catalysis
Seeking controllable and efficient surface dopant molecules for transition‐metal dichalcogenides (TMDCs) is highly valuable for fully understanding TMDCs properties and their applications to relevant devices. The general doping effect of solvents on TMDCs are explored. By selecting suitable solvents with optimized relevant factors, controllable n‐doping of molybdenum disulfide (MoS 2 ) is obtained on the same device with the sheet density of electrons increased from 2.3 × 10 11 to 6.4 × 10 12 , 9.7 × 10 12 , and 1.6 × 10 13 by use of dimethylsulfoxide, N , N ‐dimethylformamide, and N ‐methyl‐pyrrolidone (NMP), respectively. The doping principle is explained by charge‐donating characteristics of molecule and dipole interaction. After doping by NMP, the contact resistance is reduced by four times, and the on/off current ratio of fabricated top‐gated MoS 2 transistors is increased by 3 orders of magnitude. This work can guide the selection of suitable solvents for effective doping of two‐dimensional materials and advance the development of precise controllable electronic and optoelectronic devices.