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Realizing Excellent Thermoelectric Performance of Sb 2 Te 3 Based Segmented Leg with a Wide Temperature Range Using One‐Step Sintering
Author(s) -
Xie Liangjun,
Qin Haixu,
Zhu Jianbo,
Yin Li,
Qin Dandan,
Guo Fengkai,
Cai Wei,
Zhang Qian,
Sui Jiehe
Publication year - 2020
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201901178
Subject(s) - materials science , thermoelectric effect , seebeck coefficient , atmospheric temperature range , figure of merit , thermal conductivity , sintering , electrical resistivity and conductivity , thermoelectric materials , doping , indium , analytical chemistry (journal) , optoelectronics , composite material , thermodynamics , electrical engineering , physics , engineering , chemistry , chromatography
To achieve a wide temperature range and a high figure‐of‐merit, segmented assembling is considered as the most effective method based on optimized low‐temperature and medium‐temperature thermoelectric materials. In this work, divalent magnesium (Mg) as acceptor doping in both Bi 0.5 Sb 1.5 Te 3 and indium (In) alloyed Sb 2 Te 3 play an important role in improving thermoelectric performance, including enhanced power factor by balancing the electrical conductivity and Seebeck coefficient, reduced bipolar thermal conductivity by delaying occurrence of intrinsic excitation, and reduced lattice thermal conductivity due to point defects. Finally, both the figure‐of‐merit ( ZT ) value and the corresponding operating temperature range are improved. Typically, Mg 0.01 Bi 0.5 Sb 1.49 Te 3 with a ZT ave of 1.16 from 300 to 520 K and a ZT ave of 0.84 for Mg 0.02 In 0.1 Sb 1.88 Te 3 from 500 to 680 K are obtained. To further obtain wide‐temperature high ZT value, p‐type Mg 0.01 Bi 0.5 Sb 1.49 Te 3 /Mg 0.02 In 0.1 Sb 1.88 Te 3 segmented leg with excellent interface bonding and extremely low contact resistivity is successfully fabricated by only one‐step sintering process. The corresponding average ZT value is up to 1.02 with a broad temperature range from 300 to 680 K, and a maximum theoretical conversion efficiency of 12.7% with a temperature difference of 380 K is obtained. This provides guidelines for high efficiency thermoelectric devices.