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Synergistic Regulation of Phonon and Electronic Properties to Improve the Thermoelectric Performance of Chalcogenide CuIn 1− x Ga x Te 2 : y InTe ( x = 0–0.3) with In Situ Formed Nanoscale Phase InTe
Author(s) -
Li Min,
Luo Yong,
Hu Xiaojuan,
Cai Gemei,
Han Zhongkang,
Du Zhengliang,
Cui Jiaolin
Publication year - 2020
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201901141
Subject(s) - materials science , thermoelectric effect , phonon , chalcogenide , condensed matter physics , ternary operation , thermoelectric materials , figure of merit , thermal conductivity , seebeck coefficient , optoelectronics , thermodynamics , composite material , physics , computer science , programming language
Most ternary Cu‐In‐Te chalcogenides have large bandgaps and high Seebeck coefficients, hence they have received much attention in the thermoelectric (TE) community. However, it is still challenging to reduce their thermal conductivities while sustaining their electrical properties; therefore, much work needs to be done. The phonon and electronic properties in ternary CuInTe 2 ‐based chalcogenides CuIn 1− x Ga x Te 2 : y InTe ( x = 0–0.3) with in situ formed nanoscale phase InTe precipitated in the grain boundaries is synergistically regulated. This regulation reduces the lattice thermal conductivity by a factor of ≈2 compared to pristine CuInTe 2 , due to phonon–phonon interaction and point defect scatterings introduced in the main phase at high temperatures for samples at x ≤ 0.2, combined with the phonon blocking effect from InTe at low and middle temperatures. At the same time, the power factor enhances by 73%. As a result, the TE performance improves significantly with a peak figure of merit value of 1.22 at ≈850 K.