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Solution‐Processed High‐Performance p‐Type Perovskite NdAlO 3 Thin Films for Transparent Electronics
Author(s) -
Xin Zhijie,
Ding Yanan,
Zhu Yixin,
Fu Chuanyu,
Yao Zhao,
Chen Qian,
Liu Guoxia,
Shan Fukai
Publication year - 2020
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201901110
Subject(s) - materials science , thin film , thin film transistor , perovskite (structure) , optoelectronics , ternary operation , heterojunction , semiconductor , spin coating , field effect , electron mobility , fabrication , nanotechnology , layer (electronics) , chemical engineering , computer science , medicine , alternative medicine , pathology , engineering , programming language
Transparent oxide semiconductors exhibit great potential as fundamental building blocks for electronic applications. However, the lack of high‐performance p‐type oxide materials limits their potential applications for transparent electronics. Ternary p‐type perovskite NdAlO 3 thin films are prepared by spin coating and annealed at various temperatures. It is demonstrated that neodymium vacancies (V Nd ) is generated in NdAlO 3 thin film, and the presence of V Nd results in high hole mobility. The thin‐film transistors (TFTs) based on NdAlO 3 thin film are integrated and exhibit typical p‐channel transistor behavior. The TFT based on NdAlO 3 thin film annealed at 700 °C exhibits an optimized electrical performance, including a field‐effect mobility ( µ FE ) of 0.19 cm 2 V −1 s −1 and an on/off current ratio ( I on / I off ) of ≈10 5 . When high‐ k Al 2 O 3 dielectric is integrated into the TFTs, the µ FE and I on / I off are further improved to 9.93 cm 2 V −1 s −1 and ≈10 6 , respectively. The fabrication of a p–n junction based on p‐NdAlO 3 /n‐In 2 O 3 heterojunction further confirms the excellent p‐type performance of the perovskite NdAlO 3 thin films. This work not only demonstrates the possibility of p‐type perovskite NdAlO 3 thin films applicable for transparent electronics, but also provides guidelines for the design of novel p‐type oxide semiconductors.