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Metal–Semiconductor Field‐Effect Transistors Based on the Amorphous Multi‐Anion Compound ZnON
Author(s) -
Reinhardt Anna,
Wenckstern Holger,
Grundmann Marius
Publication year - 2020
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201901066
Subject(s) - materials science , optoelectronics , schottky diode , rectification , diode , schottky barrier , transistor , threshold voltage , semiconductor , field effect transistor , amorphous solid , voltage , electrical engineering , crystallography , chemistry , engineering
Electrical properties of metal–semiconductor field‐effect transistors (MESFETs) based on the amorphous n‐type multi‐anion compound zinc oxynitride (ZnON) comprising reactively sputtered platinum as Schottky gate are presented. The Schottky barrier diodes reveal a rectification ratio of 4 × 10 3 at ±2 V and an ideality factor of 1.43. The investigated MESFETs show good switching characteristics with a switching voltage below 2 V, low subthreshold swing of 112 mV dec −1 and reasonable current on/off ratios up to 5 × 10 5 . Additionally, the stability of the devices under visible light illumination is proven.