Premium
Nanoribbon‐Based Flexible High‐Performance Transistors Fabricated at Room Temperature
Author(s) -
Zumeit Ayoub,
Navaraj William Taube,
Shakthivel Dhayalan,
Dahiya Ravinder
Publication year - 2020
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201901023
Subject(s) - materials science , transistor , optoelectronics , dielectric , fabrication , active matrix , flexible electronics , field effect transistor , nanotechnology , thin film transistor , voltage , electrical engineering , medicine , alternative medicine , pathology , layer (electronics) , engineering
Si‐nanoribbon‐based high‐performance field‐effect transistors (FETs) with room temperature (RT)‐deposited dielectric are presented. The distinct feature of these devices is that the high‐quality SiN x dielectric deposition at RT, directly on the transfer‐printed nanoribbons, is compatible with most flexible substrates. The performance of these FETs (mobility ≈656 cm 2 V −1 s −1 and on/off ratio >10 6 ) is on par with the highest performance of similar devices reported with high‐temperature processes, and significantly higher than devices reported with low‐temperature processes. The transfer and output characteristics of nanoribbon‐based field‐effect transistors under planar, tensile, and compressive bending and multiple bending cycles (100) show excellent mechanical stability of the devices as they retain performance. The device characteristics are also compared with the equivalent simulation data. The excellent response of nanoribbon‐based FETs and the fabrication compatibility with diverse flexible substrates makes the presented approach attractive for flexible electronics applications such as conformal tactile active matrix sensors for e‐skin, where high performance is needed.