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Nonpolar Resistive Switching of Multilayer‐hBN‐Based Memories
Author(s) -
Zhuang Pingping,
Lin Weiyi,
Ahn Jaehyun,
Catalano Massimo,
Chou Harry,
Roy Anupam,
QuevedoLopez Manuel,
Colombo Luigi,
Cai Weiwei,
Banerjee Sanjay K.
Publication year - 2020
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201900979
Subject(s) - resistive random access memory , materials science , optoelectronics , electrical conductor , hexagonal boron nitride , joule heating , resistive touchscreen , mechanism (biology) , joule (programming language) , nanotechnology , boron nitride , non volatile memory , voltage , electrical engineering , composite material , philosophy , graphene , epistemology , efficient energy use , engineering
Abstract Resistive switching (RS) induced by electrical bias is observed in numerous materials, including 2D hexagonal boron nitride (hBN), which has been used in resistive random access memories (RRAMs) in recent years. For practical high‐density, cross‐point memory arrays, compared with bipolar memories, nonpolar (or unipolar) devices are preferable in terms of peripheral circuit design and storage density. The non‐volatile nonpolar RS phenomenon of hBN‐based RRAMs with Ti/hBN/Au structure as a prototype is reported. Stable manual DC switching for ≈10 3 cycles with an average window over five orders of magnitude is demonstrated. After identifying a possible mechanism related to the Joule heat that contributes to the rupture of conductive filaments in nonpolar RS operations, this mechanism is validated by analyzing the occurrence of the “Re‐set” process. Though the intriguing physical origin still requires more comprehensive studies, the achievement of nonpolar RS should make it more feasible to use hBN in practical RRAM technology.