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Intrinsic Dipole Coupling in 2D van der Waals Ferroelectrics for Gate‐Controlled Switchable Rectifier
Author(s) -
Dai Mingjin,
Li Kai,
Wang Fakun,
Hu Yunxia,
Zhang Jia,
Zhai Tianyou,
Yang Bin,
Fu Yongqing,
Cao Wenwu,
Jia Dechang,
Zhou Yu,
Hu PingAn
Publication year - 2020
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201900975
Subject(s) - ferroelectricity , materials science , miniaturization , optoelectronics , diode , rectification , dipole , van der waals force , semiconductor , ferroelectric capacitor , dielectric , nanotechnology , electrical engineering , voltage , physics , engineering , quantum mechanics , molecule
Abstract Miniaturization of device elements, such as ferroelectric diodes, depends on the downscaling of ferroelectric film, which is also crucial for developing high‐density information storage technologies of ferroelectric random access memories (FeRAMs). Recently emerged ferroelectric two‐dimensional (2D) van der Waals (vdWs) layered materials bring an additional opportunity to further increase the density of FeRAMs. A lateral, switchable rectifier is designed and fabricated based on atomically thin 2D α‐In 2 Se 3 ferroelectric diodes, thus breaking the thickness limitation of conventional ferroelectric films and achieving an unprecedented level of miniaturization. This is realized through the interrelated coupling between out‐of‐plane and in‐plane dipoles at room temperature; that is, horizontal polarization reversal can be effectively controlled through a vertical electric field. Being further explored as a switchable rectifier, the obtained maximum value of rectification ratio for the α‐In 2 Se 3 based ferroelectric diode can reach up to 2.5 × 10 3 . These results indicate that 2D ferroelectric semiconductors can offer a pathway to develop next‐generation multifunctional electronics.