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High‐Electric‐Field‐Induced Phase Transition and Electrical Breakdown of MoTe 2
Author(s) -
Kim Changsik,
Issarapanacheewin Sudarat,
Moon Inyong,
Lee Kwang Young,
Ra Changho,
Lee Sungwon,
Yang Zheng,
Yoo Won Jong
Publication year - 2020
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201900964
Subject(s) - materials science , raman spectroscopy , electric field , phase transition , ambipolar diffusion , optoelectronics , transistor , field effect transistor , phase (matter) , electrode , semiconductor , breakdown voltage , dissipation , condensed matter physics , analytical chemistry (journal) , voltage , electrical engineering , plasma , chemistry , optics , physics , engineering , organic chemistry , quantum mechanics , chromatography , thermodynamics
2D molybdenum ditelluride (MoTe 2 ) has recently received significant attention due to its unique phase transition and ambipolar behavior as well as thickness‐dependent bandgap. The phase transition and electrical breakdown of various thickness MoTe 2 field‐effect transistors observed under high electric fields are addressed. Interestingly, the MoTe 2 exhibits phase transition from a semiconducting 2H phase to a metallic 1T′ almost simultaneously with electrical breakdown, and this is confirmed by a Raman peak of 1T′‐MoTe 2 at 125 cm −1 . Using Raman mapping results of MoTe 2 FETs obtained after the breakdown, it is revealed that the phase transition is initiated from the metal contacting electrode regions of source and drain. All the Raman peaks of MoTe 2 shifted to low frequency with increasing drain voltage. Based on the Raman peak shifts, the temperature change in the MoTe 2 FETs while device operation is in progress is estimated. The maximum temperature and dissipated power of a tri‐layer MoTe 2 device are found to reach 495 K and 5.85 mW, respectively, at an electric field of 6.5 V µm −1 . This research provides guidelines for circuit design toward the application of 2D semiconductor devices, related to the energy dissipation and electrical breakdown unique to 2D phase transitional materials.