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High‐Performance Polycrystalline Silicon Thin‐Film Transistors without Source/Drain Doping by Utilizing Anisotropic Conductivity of Bridged‐Grain Lines
Author(s) -
Zhang Meng,
Lin Haotao,
Deng Sunbin,
Chen Rongsheng,
Li Guijun,
Han SuTing,
Zhou Ye,
Yan Yan,
Zhou Wei,
Wong Man,
Kwok HoiSing
Publication year - 2020
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201900961
Subject(s) - materials science , thin film transistor , polycrystalline silicon , doping , optoelectronics , dopant , silicon , conductivity , anisotropy , transistor , crystallite , fabrication , nanotechnology , electrical engineering , optics , metallurgy , voltage , layer (electronics) , chemistry , physics , engineering , medicine , alternative medicine , pathology
By utilizing anisotropic conductivity of bridged‐grain (BG) lines, a polycrystalline silicon (poly‐Si) thin‐film transistor (TFT) without source/drain (S/D) doping is designed, simulated, and fabricated. In the new design, the current is made to flow along the BG lines in the S/D region and flow perpendicularly to the BG lines in the channel. By taking advantage of the anisotropic conductivity of the BG lines, the S/D doping process is eliminated and the fabrication process cost is reduced. Meanwhile, the advantages of adopting BG lines are maintained. The as‐fabricated TFTs without S/D doping exhibit excellent device characteristics, compared with normal TFTs. The reliability of TFTs without S/D doping is also evaluated under hot carrier stress and negative/positive bias stress. Additionally, the proposed new TFT structure allows a wider range of dopant activation conditions.
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