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Near‐Infrared‐Irradiation‐Mediated Synaptic Behavior from Tunable Charge‐Trapping Dynamics
Author(s) -
Wang Yan,
Yang Jing,
Ye Wenbin,
She Donghong,
Chen Jinrui,
Lv Ziyu,
Roy Vellaisamy A. L.,
Li Huilin,
Zhou Kui,
Yang Qing,
Zhou Ye,
Han SuTing
Publication year - 2020
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201900765
Subject(s) - neuromorphic engineering , materials science , optoelectronics , neural facilitation , transistor , modulation (music) , synaptic plasticity , nanotechnology , computer science , voltage , artificial neural network , electrical engineering , artificial intelligence , physics , acoustics , chemistry , biochemistry , receptor , engineering
Parallel information storage coupled with storage density is a major focus for non‐volatile memory devices to achieve neuromorphic computing that can work at low power. In this regard, a photoactive charge‐trapping medium consisting of inorganic heteronanosheets for the fabrication of a synaptic transistor is demonstrated. This synaptic device senses and responds to near‐infrared (NIR) light signals and mimics the memorization and dynamic forgetting process due to the reversible nature of photogenerated charge interaction. Device‐level synaptic evolutions from short‐term plasticity to long‐term plasticity, paired pulse facilitation, and paired pulse depression are realized with light modulation on the weight update terminal. To understand the underlying mechanism of the synaptic behavior under NIR signals, systematic analysis is carried out using in situ atomic force microscopy based electrical techniques. With its photoactive architecture, this information processing analogue is validated for visual object recognition, which paves the way for implementing NIR‐controlled neuromorphic computing.