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All‐Oxide Thin Film Transistors and Rectifiers Enabling On‐Chip Capacitive Energy Storage
Author(s) -
Wang Zhenwei,
Alshammari Fwzah H.,
Omran Hesham,
Hota Mrinal K.,
AlJawhari Hala A.,
Salama Khaled N.,
Alshareef Husam N.
Publication year - 2019
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201900531
Subject(s) - materials science , thin film transistor , optoelectronics , transistor , rectification , electrical engineering , capacitive sensing , voltage , rectifier (neural networks) , energy storage , electrode , thin film , chip , layer (electronics) , nanotechnology , computer science , engineering , power (physics) , chemistry , stochastic neural network , physics , quantum mechanics , machine learning , recurrent neural network , artificial neural network
All‐oxide, fully‐transparent thin film transistors and rectifiers, processed entirely by atomic layer deposition, have been developed for on‐chip capacitive energy storage. Fully depleted thin film transistor (TFT) operation is achieved by optimizing the carrier concentration in the ZnO channels. The TFTs show an average saturation mobility of 10.5 cm 2 V −1 s −1 , a stable positive turn‐on voltage of 0.88 V, a low subthreshold swing of 0.162 V dec −1 , and the entire device achieves an overall transmittance of 85%. The field‐effect rectifiers (FER) are fabricated based on short‐circuiting the gate and drain electrodes of the TFT structure. Rectification ratio of 3.5 × 10 6 is achieved in DC measurements. Under AC input, the rectifiers can steadily operate at an input frequency up to 10 MHz and amplitude (peak to peak) up to 20 V. The rectifier can be used for signal processing applications with frequency up to 1 MHz. The energy storage utility of the rectifiers is demonstrated by rectifying AC input signals and successfully charging home‐made electrochemical on‐chip microsupercapacitors. The results demonstrate that integrated, all‐oxide thin film rectifiers can be used for on‐chip capacitive energy storage.