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Flexible, Temperature‐Stable, and Fatigue‐Endurable PbZr 0.52 Ti 0.48 O 3 Ferroelectric Film for Nonvolatile Memory
Author(s) -
Yang Changhong,
Han Yajie,
Qian Jin,
Cheng Zhenxiang
Publication year - 2019
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201900443
Subject(s) - materials science , ferroelectricity , non volatile memory , optoelectronics , polarization (electrochemistry) , composite material , electrode , flexible electronics , nanotechnology , dielectric , chemistry
Flexible memory devices represent an emerging technological goal for information storage and data processing in portable, wearable, and smart electronics that work in curved conditions. This work presents a direct and cost‐effective fabrication of a bendable PbZr 0.52 Ti 0.48 O 3 (PZT) ferroelectric memory element with a Pt bottom electrode layer and Au top electrodes on a flexible mica substrate. The polycrystalline PZT film with morphotropic phase boundary composition shows excellent electrical properties, reflected by superior ferroelectricity with a large remanent polarization ( P r ≈ 30 μC cm −2 ), good frequency stability (1–50 kHz), broad working temperature (25–200 °C), and excellent fatigue resistance (up to 10 9 ). Most importantly, with the assistance of the flexible mica substrate and the individual bendability of each film layer, the all‐inorganic PZT ferroelectric film capacitor can be safely bent to a small bending radius of 2 mm with a bending strain of less than 0.3%, undergo repeated bending–releasing cycles for 10 3 times where no obvious deterioration occurs in polarization, and show data retention of 10 5 s, and fatigue resistance at 10 9 switching cycles. This work is anticipated to advance the application potential of high‐performance flexible ferroelectric memories in next‐generation wearable electronic devices.