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Electronic Devices and Circuits Based on Wafer‐Scale Polycrystalline Monolayer MoS 2 by Chemical Vapor Deposition
Author(s) -
Wang Lin,
Chen Li,
Wong Swee Liang,
Huang Xin,
Liao Wugang,
Zhu Chunxiang,
Lim YeeFun,
Li Dabing,
Liu Xinke,
Chi Dongzhi,
Ang KahWee
Publication year - 2019
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201900393
Subject(s) - materials science , chemical vapor deposition , optoelectronics , nanotechnology , electronic circuit , transistor , molybdenum disulfide , field effect transistor , wafer , monolayer , logic gate , nand gate , resistive random access memory , electronic engineering , electrical engineering , voltage , metallurgy , engineering
2D layered materials such as graphene and transition‐metal dichalcogenides (TMDCs) have emerged as promising candidates for next‐generation nanoelectronic applications due to their atomically thin thicknesses and unique electronic properties. Among TMDCs, molybdenum disulfide (MoS 2 ) has been extensively investigated as a channel material for field‐effect transistor (FET) and circuit realization. However, to date most reported works have been limited to exfoliated MoS 2 nanosheets primarily due to the difficulty in synthesizing large‐area and high‐quality MoS 2 thin film. A demonstration of wafer‐scale monolayer MoS 2 synthesis is reported by chemical vapor deposition (CVD), enabling transistors, memristive memories, and integrated circuits to be realized simultaneously. Specifically, building on top‐gated FETs with a high‐κ gate dielectric (HfO 2 ), Boolean logic circuits including inverters and NAND gates are successfully demonstrated using direct‐coupled FET logic technology, with typical inverters exhibiting a high voltage gain of 16, a large total noise margin of 0.72 V DD at V DD = 3 V, and perfect logic‐level matching. Additionally, resistive switching is demonstrated in a MoS 2 ‐based memristor, indicating that they have great potential for the development of resistive random‐access memory. By virtue of scalable CVD growth capability, the way toward practical and large‐scale electronic applications of MoS 2 is indicated.