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Peeling off Nanometer‐Thick Ferromagnetic Layers and Their van der Waals Heterostructures
Author(s) -
Yuan Kai,
Yao Xiaohan,
Wang Hailong,
Han Bo,
Gao Peng,
Watanabe Kenji,
Taniguchi Takashi,
Dai Lun,
Zhao Jianhua,
Ye Yu
Publication year - 2019
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201900345
Subject(s) - materials science , heterojunction , ferromagnetism , spintronics , molecular beam epitaxy , van der waals force , magnetism , optoelectronics , magnetic semiconductor , magnetoresistance , nanotechnology , condensed matter physics , semiconductor , epitaxy , layer (electronics) , magnetic field , chemistry , physics , organic chemistry , quantum mechanics , molecule
The recent discovery of 2D van der Waals (vdWs) magnetic crystals provides an ideal platform for fundamental understanding of 2D magnetism, as well as the applications of low‐power spintronic devices. One can integrate 2D magnetic materials into vdWs heterostructures with engineered properties, and also manipulate the magnetism via electrostatic gating. However, due to their instability, the handing of 2D magnetic materials can only be carried out under the help of encapsulation with other 2D materials (such as hexagonal boron nitride ( h BN)) in a glove box, which is the biggest barrier toward its practical applications. Here, an approach about peeling‐off and transfer of 2D ferromagnetic (Ga,Mn)As layers with thickness of ≈10–20 nm grown by the molecular beam epitaxy under ambient conditions is introduced. Transmission electron microscopy characterizations confirm the single‐crystalline nature of the lifted‐off (Ga,Mn)As. Superconducting quantum interference device measurements demonstrate that the lifted‐off (Ga,Mn)As maintains its ferromagnetism. Using vdWs heterostructure assembly, technique h BN/(Ga,Mn)As top‐gate Hall device and p ‐(Ga,Mn)As/ n ‐MoS 2 heterojunction diode are fabricated. The electrical transport measurements demonstrate the ferromagnetic nature and gate tunable magnetoresistance of the lifted‐off (Ga,Mn)As layer. This approach makes it possible to significantly expand the range of 2D ferromagnetic materials and their vdWs heterostructures.