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Balanced Performance Enhancements of a‐InGaZnO Thin Film Transistors by Using All‐Amorphous Dielectric Multilayers Sandwiching High‐k CaCu 3 Ti 4 O 12
Author(s) -
Jung Ye Seul,
Han Chan Su,
Mohanty Bhaskar Chandra,
Choi Hong je,
Lee Jin Hyeok,
Kim Hyun Jae,
Cho Yong Soo
Publication year - 2019
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201900322
Subject(s) - materials science , thin film transistor , amorphous solid , dielectric , optoelectronics , threshold voltage , transistor , saturation (graph theory) , subthreshold swing , voltage , nanotechnology , electrical engineering , crystallography , chemistry , mathematics , engineering , layer (electronics) , combinatorics
The requirements of low power consumption and fast operation have necessitated the development of thin film transistors (TFTs) with exploration of new dielectric materials. Here, the unprecedented integration of high‐κ dielectric CaCu 3 Ti 4 O 12 is reported, yielding significant enhancements in the performance of amorphous InGaZnO TFTs. Using a multilayer structured amorphous Al 2 O 3 /CaCu 3 Ti 4 O 12 /Al 2 O 3 dielectric configuration, the performance of the transistors is greatly improved as highlighted with high saturation mobility (>10 cm 2 Vs −1 ), high on/off current ratio (3.8 × 10 7 ), low threshold voltage (≈0.51 V), and low subthreshold swing (≈0.45 V decade −1 ). The balanced performance enhancements are attributed to the lower density of interfacial/bulk trap states and sufficient band offsets.