z-logo
Premium
Surface Catalytic Modification of Conjugated Polymer on Low‐Cost Bottom Contact for Improved Injection Efficiency of Organic Transistors
Author(s) -
Chen Xiaosong,
Yi Kongyang,
Zhang Wenjing,
Wei Dacheng,
Liu Yunqi
Publication year - 2019
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201900028
Subject(s) - pentacene , materials science , contact resistance , organic electronics , electrode , conjugated system , organic semiconductor , surface modification , transistor , polymer , field effect transistor , work function , chemical engineering , electronics , organic field effect transistor , surface energy , optoelectronics , thin film transistor , semiconductor , nanotechnology , composite material , chemistry , electrical engineering , engineering , layer (electronics) , voltage
Their mismatched energy alignment with organic semiconductors limits the application of low‐cost metals in organic electronics. A novel surface catalytic low‐temperature chemical vapor deposition (CVD) based on the Ullmann reaction is applied to selectively modify patterned Ag/Cu electrodes. The work functions of Ag and Cu are tuned from 4.3 and 4.5 eV to 4.8 and 4.9 eV, respectively, after modification with conjugated polymers. Owing to the change in work function and pentacene morphology, the contact resistance decreases by several orders of magnitude compared with that of devices with pristine Ag or Cu electrodes, and the correspond mobilities of pentacene bottom‐contact field effect transistors increase to 0.66 cm 2 V −1 s −1 (Ag) and 0.64 cm 2 V −1 s −1 (Cu). This mobility is one of the highest values demonstrated with pentacene organic field‐effect transistors with Cu or Ag electrodes. This simple, clean, and low‐temperature modification method paves the way for the application of low‐cost metals in organic electronics.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here