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An Electric‐Field‐Controlled High‐Speed Coexisting Multibit Memory and Boolean Logic Operations in Manganite Nanowire via Local Gating
Author(s) -
Shi Qian,
Jiang Fengxian,
Yu Yang,
Lin Hanxuan,
Kou Yunfang,
Miao Tian,
Liu Hao,
Yang Wenting,
Wang Wenbin,
Cai Peng,
Xu Xiaohong,
Guo Hangwen,
Yin Lifeng,
Shen Jian
Publication year - 2019
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201900020
Subject(s) - bottleneck , nanowire , materials science , von neumann architecture , logic gate , computer science , electronic engineering , electrical engineering , nanotechnology , embedded system , engineering , operating system
In‐memory computing is currently a hot research field and shows potential to overcome the Von Neumann bottleneck in conventional computers. Most proposed designs demand use of electrical current, which will generate substantial heat and power consumption when miniaturized. Here, multibit memory and Boolean logic operation are shown at the same location in a manganite nanowire through electric field exploitation. Local electrical fields are employed to control eight‐level resistive states with high accuracy along with Boolean logic operations. Such architecture only requires current density of 4 × 10 1 A cm −2 for resistance measurements, which is four orders of magnitude smaller than state‐of‐the‐art designs. In addition, the device shows a resistive switching time within 8 ns, which is suitable for high‐speed electronics technology. This study highlights a route towards in‐memory computing with low heat dissipation and power consumption.