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Artificial Synapses: Photoelectric Plasticity in Oxide Thin Film Transistors with Tunable Synaptic Functions (Adv. Electron. Mater. 12/2018)
Author(s) -
Wu Quantan,
Wang Jiawei,
Cao Jingchen,
Lu Congyan,
Yang Guanhua,
Shi Xuewen,
Chuai Xichen,
Gong Yuxin,
Su Yue,
Zhao Ying,
Lu Nianduan,
Geng Di,
Wang Hong,
Li Ling,
Liu Ming
Publication year - 2018
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201870058
Subject(s) - materials science , neuromorphic engineering , optoelectronics , synapse , photonics , transistor , photoelectric effect , thin film transistor , electronics , nanotechnology , oxide , electrical engineering , neuroscience , computer science , voltage , engineering , artificial neural network , layer (electronics) , machine learning , metallurgy , biology
In article number 1800556 , Hong Wang, Ling Li and co‐workers successfully emulate versatile functions of a biological synapse based on indium–gallium–zinc oxide (IGZO) thin film transistors through a new design by combining photonic and electric stimuli. Meanwhile, the synaptic functions can be mediated by modulating the composition ratio of IGZO film. The work contributes to the development of neuromorphic electronics and the combination of photonics and electric has great prospects in optoelectronic applications.