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Flexible Artificial Synapses: Transferable and Flexible Artificial Memristive Synapse Based on WO x Schottky Junction on Arbitrary Substrates (Adv. Electron. Mater. 12/2018)
Author(s) -
Lin Ya,
Zeng Tao,
Xu Haiyang,
Wang Zhongqiang,
Zhao Xiaoning,
Liu Weizhen,
Ma Jiangang,
Liu Yichun
Publication year - 2018
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201870056
Subject(s) - memristor , materials science , nanotechnology , synapse , flexibility (engineering) , substrate (aquarium) , layer (electronics) , optoelectronics , bioelectronics , electronic engineering , biosensor , statistics , oceanography , mathematics , neuroscience , biology , geology , engineering
Using a nondestructive water‐dissolution method, Haiyang Xu, Zhongqiang Wang, and co‐workers demonstrate a transferable WO x ‐based memristor with a NaCl substrate as the sacrificial layer in article number 1800373 . The synaptic devices are transferred onto diverse substrates, presenting excellent flexibility and high mechanical endurance. The essential functions of synaptic plasticity are obtained by the device in the bent state. The work presents a feasible method that enables inorganic memristors for transferable applications.