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Polyoxometalates: Polyoxometalates‐Modulated Reduced Graphene Oxide Flash Memory with Ambipolar Trapping as Bidirectional Artificial Synapse (Adv. Electron. Mater. 12/2018)
Author(s) -
Chen Xiaoli,
Pan Jingyi,
Fu Jingjing,
Zhu Xin,
Zhang Chen,
Zhou Li,
Wang Yan,
Lv Ziyu,
Zhou Ye,
Han SuTing
Publication year - 2018
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201870055
Subject(s) - ambipolar diffusion , graphene , neuromorphic engineering , materials science , oxide , nanotechnology , trapping , flash memory , flash (photography) , synapse , optoelectronics , electron , embedded system , computer science , neuroscience , artificial intelligence , physics , artificial neural network , optics , ecology , quantum mechanics , metallurgy , biology
In article number 1800444 , Su‐Ting Han and co‐workers demonstrate a polyoxometalates (POMs)‐modulated reduced graphene oxide flash memory with ambipolar charge trapping properties. Synaptic functions with the benefit of ambipolar trapping are emulated at the device‐level. This concept constitutes an innovative paradigm of applications for integrating polyoxometalates composites and neuromorphic computing.