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Resistive Switching Memory: Reliable Ge 2 Sb 2 Te 5 ‐Integrated High‐Density Nanoscale Conductive Bridge Random Access Memory using Facile Nitrogen‐Doping Strategy (Adv. Electron. Mater. 11/2018)
Author(s) -
RaeisHosseini Niloufar,
Lim Seokjae,
Hwang Hyunsang,
Rho Junsuk
Publication year - 2018
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201870052
Subject(s) - materials science , nanoelectronics , dopant , nanoscopic scale , optoelectronics , doping , phase change memory , electrical conductor , nanotechnology , resistive random access memory , nitrogen , memristor , electronic engineering , electrical engineering , composite material , physics , engineering , layer (electronics) , voltage , quantum mechanics
A phase change material (PCM) is implemented in a memristive device as an emerging technology for the next generation of nanoelectronics. In article number 1800360 , Junsuk Rho and co‐workers develop a programmable metallization memristor with a simple Ag/phase change material/Pt structure using an alloy compound of Ge, Sb, Te (GST). The performance of the memory device is improved by a facile nitrogen‐dopant method. Reliable and reproducible uniform switching characteristics are reported by the nitrogen‐doped GST device.