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Field Effect Transistors: Ferroelectric Negative Capacitance Field Effect Transistor (Adv. Electron. Mater. 11/2018)
Author(s) -
Tu Luqi,
Wang Xudong,
Wang Jianlu,
Meng Xiangjian,
Chu Junhao
Publication year - 2018
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201870051
Subject(s) - negative impedance converter , materials science , ferroelectricity , capacitance , transistor , field effect transistor , optoelectronics , voltage , electrical engineering , electrode , voltage source , physics , dielectric , engineering , quantum mechanics
Negative capacitance field‐effect transistors (NCFETs) achieve ultra‐low sub‐threshold swing through internal voltage amplification, stemming from the negative capacitance effect during the ferroelectric polarization switching process. In article number 1800231 , Jianlu Wang and co‐workers review the theoretical and experimental results of NCFETs based on various gate structures and typical ferroelectrics. Novel NCFET structures, combined with 2D materials and FinFET, show great prospects for the future.