Premium
Thin‐Film Transistors: Chemical Doping Effects on CVD‐Grown Multilayer MoSe 2 Transistor (Adv. Electron. Mater. 6/2018)
Author(s) -
Yoo Hocheon,
Hong Seongin,
Moon Hyunseong,
On Sungmin,
Ahn Hyungju,
Lee HanKoo,
Kim Sunkook,
Hong Young Ki,
Kim JaeJoon
Publication year - 2018
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201870032
Subject(s) - materials science , transistor , tungsten diselenide , doping , thin film transistor , chemical vapor deposition , optoelectronics , dipole , superposition principle , nanotechnology , catalysis , electrical engineering , voltage , organic chemistry , transition metal , chemistry , layer (electronics) , engineering , physics , quantum mechanics
Chemical doping effects on chemical‐vapor‐deposited multilayer molybdenum diselenide (MoSe 2 ) transistors are demonstrated by Hocheon Yoo, Sunkook Kim, Young Ki Hong, Jae‐Joon Kim, and co‐workers in article number 1700639 . The cover shows synergies due to the hybridization between π ‐conjugated polymers and MoSe 2 in terms of the linear superposition of molecular dipole moments as well as charge transfer phenomena resulting in dramatic enhancements of the device performances.