Premium
Emergent Ferromagnetism: Direct Demonstration of the Emergent Magnetism Resulting from the Multivalence Mn in a LaMnO 3 Epitaxial Thin Film System (Adv. Electron. Mater. 6/2018)
Author(s) -
Niu Wei,
Liu Wenqing,
Gu Min,
Chen Yongda,
Zhang Xiaoqian,
Zhang Minhao,
Chen Yequan,
Wang Ji,
Du Jun,
Song Fengqi,
Pan Xiaoqing,
Pryds Nini,
Wang Xuefeng,
Wang Peng,
Xu Yongbing,
Chen Yunzhong,
Zhang Rong
Publication year - 2018
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201870030
Subject(s) - ferromagnetism , antiferromagnetism , condensed matter physics , manganite , magnetism , materials science , vacancy defect , thin film , epitaxy , heterojunction , physics , nanotechnology , layer (electronics)
Emergent ferromagnetism in an otherwise antiferromagnetic LaMnO 3 ‐based heterostructure attributable to the cation‐vacancy‐induced oxygen excess effect through direct observation of multivalence Mn is reported by Xuefeng Wang, Peng Wang, Yongbing Xu, Yunzhong Chen, and co‐workers in article number 1800055 . The ferromagnetism is mediated by the Mn 3+ ‐O‐Mn 4+ double‐exchange mechanism. It provides a hitherto unexplored multivalence state of Mn on the emergent ferromagnetism in manganite thin films.