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Thin‐Film Transistors: Top‐Split‐Gate Ambipolar Organic Thin‐Film Transistors (Adv. Electron. Mater. 5/2018)
Author(s) -
Yoo Hocheon,
Lee Seon Baek,
Lee DongKyu,
Smits Edsger C. P.,
Gelinck Gerwin H.,
Cho Kilwon,
Kim JaeJoon
Publication year - 2018
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201870027
Subject(s) - ambipolar diffusion , materials science , transistor , optoelectronics , gate dielectric , thin film transistor , wafer , organic field effect transistor , electrical engineering , field effect transistor , nanotechnology , layer (electronics) , electron , voltage , engineering , physics , quantum mechanics
In the article number 1700536 , Kilwon Cho, Jae‐Joon Kim and co‐workers report a device operating as an unipolar p‐ or n‐type transistor. The control‐gate electrode at the middle of the dielectric layer suppresses the counter carrier injection. The background describes the digital circuit and the integrated circuit on the wafer, which indicates that the proposed device technology is an important step toward design of a practical ambipolar transistor integratedcircuit.