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ReRAM: Role of the Electrode Material on the RESET Limitation in Oxide ReRAM Devices (Adv. Electron. Mater. 2/2018)
Author(s) -
Schönhals Alexander,
Rosário Carlos M. M.,
HoffmannEifert Susanne,
Waser Rainer,
Menzel Stephan,
Wouters Dirk J.
Publication year - 2018
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201870011
Subject(s) - resistive random access memory , materials science , electrode , reset (finance) , oxide , optoelectronics , tantalum , voltage , resistive touchscreen , polarity (international relations) , nanotechnology , electrical engineering , metallurgy , chemistry , engineering , biochemistry , cell , financial economics , economics
In article number 1700243 , a concomitant resistive switching mode with opposite voltage polarity, in comparison to the standard switching in tantalum‐oxide‐based ReRAM devices, is identified by Alexander Schönhals, Dirk J. Wouters, and co‐workers. A physical model based on oxygen exchange between the metal oxide and the active (Pt) electrode is proposed, schematically depicted in the inside cover picture.