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Thin‐Film Transistors: ZnO Nanofiber Thin‐Film Transistors with Low‐Operating Voltages (Adv. Electron. Mater. 1/2018)
Author(s) -
Wang Fengyun,
Song Longfei,
Zhang Hongchao,
Meng You,
Luo Linqu,
Xi Yan,
Liu Lei,
Han Ning,
Yang Zaixing,
Tang Jie,
Shan Fukai,
Ho Johnny C.
Publication year - 2018
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201870007
Subject(s) - materials science , thin film transistor , transistor , optoelectronics , threshold voltage , thin film , low voltage , voltage , nanofiber , dielectric , flexible electronics , nanotechnology , electrical engineering , layer (electronics) , engineering
High‐performance, low‐power and enhancement‐mode ZnO nanofiber thin‐film transistors with impressive electrical characteristics, such as a small positive threshold voltage of ≈0.9 V, are demonstrated by Fukai Shan, Johnny C. Ho, and co‐workers in article number 1700336 . When high‐κ AlO x dielectrics are employed, the device operating voltage can be substantially reduced, with a 10× increase in the electron mobility, indicating the potency of these nanofibers for nextgeneration electronics.