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Scalable 3D Ta:SiO x Memristive Devices
Author(s) -
Jiang Hao,
Li Can,
Lin Peng,
Pi Shuang,
Yang Jianhua Joshua,
Xia Qiangfei
Publication year - 2019
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201800958
Subject(s) - materials science , microscale chemistry , memristor , optoelectronics , reset (finance) , scalability , doping , conductance , ranging , silicon , layer (electronics) , non volatile memory , current (fluid) , switching time , nanotechnology , electrical engineering , computer science , telecommunications , mathematics education , mathematics , database , financial economics , engineering , economics , combinatorics
A highly reliable memristive device based on tantalum‐doped silicon oxide is reported, which exhibits high uniformity, robust endurance (≈1 × 10 9 cycles), fast switching speed, long retention, and analog conductance modulation. Devices with junction areas ranging from microscale to as small as 60 × 15 nm 2 are fabricated and electrically characterized. ON‐/OFF‐ conductance and reset current show weak area dependence when the device is relatively large, and they become proportional to the device area when further scaled down. Two‐layer devices with repeatable switching behavior are achieved. The current study shows the potentials of Ta:SiO 2 ‐based 3D vertical devices for memory and computing applications. It also suggests that doping of the switching layer is an efficient approach to engineer the performance of memristive devices.