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High‐Responsivity Near‐Infrared Photodetector Using Gate‐Modulated Graphene/Germanium Schottky Junction
Author(s) -
Chang Kyoung Eun,
Kim Cihyun,
Yoo Tae Jin,
Kwon Min Gyu,
Heo Sunwoo,
Kim SoYoung,
Hyun Yujun,
Yoo Jung Il,
Ko Heung Cho,
Lee Byoung Hun
Publication year - 2019
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201800957
Subject(s) - responsivity , photodetector , materials science , optoelectronics , photocurrent , graphene , germanium , infrared , schottky barrier , schottky diode , silicon , optics , nanotechnology , physics , diode
A high‐responsivity near‐infrared photodetector is demonstrated using a transparent ZnO top gate‐modulated graphene/Ge Schottky junction. The responsivity of a graphene/Ge junction photodetector characterized with a scanning photocurrent microscopy system is improved to 0.75 A W −1 . This result is 5 to 35 times higher than the previously reported graphene/Ge photodetectors that did not use gate modulation. The detectivity is also improved to 2.53 × 10 9 cm Hz 1/2 W −1 at V g = −10 V from 0.43 × 10 9 cm Hz 1/2 W −1 at V g = 0 V. The performance of this gate‐modulated graphene/Ge Schottky junction base infrared (IR) detector is comparable to a commercially available IR photodetector, but the fabrication process is much simpler and compatible with glass or flexible substrates.