Premium
High‐Performance Organic Field‐Effect Transistor with Matching Energy‐Band Alignment between Organic Semiconductor and the Charge‐Trapping Dielectric
Author(s) -
Wang Yiru,
Yang Youbin,
Ding Ping,
Wei Qi,
Gao Xu,
Wang Suidong,
Liu Chang,
Li Aidong,
Yin Jiang,
Xia Yidong,
Liu Zhiguo
Publication year - 2019
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201800865
Subject(s) - pentacene , organic field effect transistor , materials science , optoelectronics , organic semiconductor , transistor , semiconductor , homo/lumo , dielectric , gate dielectric , field effect transistor , trapping , high κ dielectric , thin film transistor , nanotechnology , voltage , chemistry , electrical engineering , ecology , engineering , organic chemistry , layer (electronics) , molecule , biology
Abstract High‐performance bottom‐gate nonvolatile organic field‐effect transistor (OFET) devices based on a special matching energy‐band alignment between the organic semiconductor pentacene and the charge‐trapping dielectric ZnTe are reported. The lower potential difference between the conduction band minimum of ZnTe and the lowest unoccupied molecular orbital of pentacene with a weak electron conductivity endows the OFET a memory window of 10 V at an applied sweeping gate‐voltage of ±15 V, a high I ON / I OFF ratio of more than 10 6 , and good retention with a high I ON / I OFF ratio of 6 × 10 5 after 10 4 s. The large memory window of the OFET is attributed to the unique energy‐band alignment of the memory device and the high density of traps in Te‐deficient ZnTe film, and the prominent retention is attributed to the deeply trapped electrons in the potential well formed by Al 2 O 3 tunneling and blocking layers.