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Recent Advances of Quantum Conductance in Memristors
Author(s) -
Xue Wuhong,
Gao Shuang,
Shang Jie,
Yi Xiaohui,
Liu Gang,
Li RunWei
Publication year - 2019
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201800854
Subject(s) - memristor , conductance , materials science , nanotechnology , quantum , realization (probability) , engineering physics , optoelectronics , physics , quantum mechanics , condensed matter physics , statistics , mathematics
Memristors with the filamentary switching mechanism have been acknowledged as a leading candidate for next‐generation nonvolatile memory applications, primarily due to their excellent downscaling potential, fast operation speed, low power consumption, and high switching endurance. In particular, room‐temperature quantum conductance effect can emerge as the size of the conducting filaments is reduced down to atomic scale, offering great opportunities for the physical understanding of memristive switching phenomena and the realization of ultrahigh‐density storage, logic‐in‐memory circuits, atomic scale photodetectors, and etc. This review presents a timely and comprehensive summary of the recent advances in quantum conductance in memristors. After a brief description on the evolution dynamics of conducting filaments, the experimental phenomena, theoretical understanding, effective control, and promising applications of quantum conductance in memristors are summarized and discussed in detail. Finally, current challenges and future prospects concerning quantum conductance in memristors are presented.