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Anomalous Hall Effect–Like Behavior with In‐Plane Magnetic Field in Noncollinear Antiferromagnetic Mn 3 Sn Films
Author(s) -
You Yunfeng,
Chen Xianzhe,
Zhou Xiaofeng,
Gu Youdi,
Zhang Ruiqi,
Pan Feng,
Song Cheng
Publication year - 2019
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201800818
Subject(s) - spintronics , condensed matter physics , antiferromagnetism , hall effect , materials science , ferromagnetism , magnetization , sputter deposition , epitaxy , magnetic field , thin film , sputtering , nanotechnology , physics , layer (electronics) , quantum mechanics
Abstract Magnetotransport is at the center of spintronics. Mn 3 Sn single crystals, an antiferromagnet that has a noncollinear 120° spin order, exhibit large anomalous Hall effect (AHE) at room temperature. But such a behavior has remained elusive in epitaxial Mn 3 Sn films. Here the observation of AHE‐like behavior with in‐plane magnetic field up to room temperature in quasi‐epitaxial Mn 3 Sn thin films, prepared by magnetron sputtering, is reported. The growth of both (1120)‐ and (0001)‐oriented Mn 3 Sn films provides a unique opportunity for comparing AHE‐like behavior in three different measurement configurations. When the magnetic field is swept along (0001) plane, such as the direction of [0110] and [2110], the films show comparatively higher Hall conductivity than its perpendicular counterpart [0001], irrespective of their respectively orthogonal current along [0001] or [0110]. A quite weak ferromagnetic moment of ≈3 emu cm −3 is obtained in (1120)‐oriented Mn 3 Sn films, guaranteeing the switching of the Hall signals with magnetization reversal. This finding would advance the integration of Mn 3 Sn in antiferromagnetic spintronics.